Direct observation/characterization of spatial distribution of current leakage spots in zinc oxide/aluminum nitride thin film precursor field effect transistor structures using conducting atomic force microscopy

被引：2

作者：

Dey, Shirshendu ^{[1
]}

Jejurikar, Suhas M. ^{[1
]}

Adhi, K. P. ^{[1
]}

Dharmadhikari, C. V. ^{[1
]}

机构：

[1] Univ Poona, Dept Phys, Ctr Adv Studies Mat Sci & Solid State Phys, Pune 411007, Maharashtra, India

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 09期

关键词：

D O I：

10.1063/1.2975374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge transport across pulsed laser deposited zinc oxide (ZnO)/aluminum nitride (AlN)/Si(100) thin film structures has been studied using conducting atomic force microscopy at different stages of sample preparation. The spatial coverage of current leakage spots could be directly imaged, characterized, and shown to exhibit hysteresis against applied bias voltage. Current-voltage (I-V) measurements on both AlN and ZnO/AlN/Si(100) structure exhibited asymmetric nonlinear behavior with a large zero current region. Further analysis of I-V and current-force data suggests Fowler-Nordheim like behavior under Hertzian contact as a dominant mechanism for electron transport. (c) 2008 American Institute of Physics.

引用

页数：3

共 8 条

[1] MEASURING THE NANOMECHANICAL PROPERTIES AND SURFACE FORCES OF MATERIALS USING AN ATOMIC FORCE MICROSCOPE [J].