Self-catalyzed growth of GaAs nanowires on silicon by HYPE

被引：0
作者：
Dong, Zhenning [1 ,2 ]
Andre, Yamina [1 ,2 ,3 ]
Dubrovskii, Vladimir [4 ,5 ]
Bougerol, Catherine [6 ,7 ]
Monier, Guillaume [1 ,2 ]
Ramdani, Reda [1 ,2 ]
Trassoudaine, Agnes [1 ,2 ,8 ]
Leroux, Christine [9 ,10 ]
Castelluci, Dominique [1 ,2 ]
Gil, Evelyne [1 ,2 ,3 ]
机构：
[1] Univ Clermont Ferrand, Clermont Univ, Inst Pascal, F-63000 Clermont Ferrand, France
[2] CNRS, UMR 6602, F-63178 Aubiere, France
[3] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia
[4] St Petersburg Acad Univ, Khlopina 8-3, St Petersburg 194021, Russia
[5] Russian Acad Sci, Ioffe Phys Tech Inst, Polytekhn Heskaya 26, St Petersburg 194021, Russia
[6] Univ Grenoble Alpes, F-38000 Grenoble, France
[7] CNRS, Inst Neel, F-38042 Grenoble, France
[8] Univ Auvergne, Inst Univ Technol, Dep Mesures Phys, F-63178 Aubiere, France
[9] Univ Sud Toulon Var, IM2NP, Bat R,BP 20132, F-83957 La Garde, France
[10] CNRS, UMR 6242, F-83957 La Garde, France
来源：
2016 INTERNATIONAL CONFERENCE LASER OPTICS (LO) | 2016年
关键词：
GaAs; IIVPE; Nanowire; Silicon; Self-catalyzed;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the first self -catalyzed growth of GaAs nanowires on patterned and non -patterned silicon (111) wafers by hydride vapor phase epitaxy (HVPE) with a record elongation rate of 30 !lm/h. The crystalline structure was analyzed using high resolution transmission electron microscopy (HRTEM). Self -catalyzed growth proceeds under gallium rich conditions at low -temperature (600 C). Nanowires exhibit cylindrical rod -like shape morphology with a mean diameter of 50 nm and are randomly distributed.
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页数：1
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