Self-catalyzed growth of GaAs nanowires on silicon by HYPE

被引：0

作者：

Dong, Zhenning ^{[1
,2
]}

Andre, Yamina ^{[1
,2
,3
]}

Dubrovskii, Vladimir ^{[4
,5
]}

Bougerol, Catherine ^{[6
,7
]}

Monier, Guillaume ^{[1
,2
]}

Ramdani, Reda ^{[1
,2
]}

Trassoudaine, Agnes ^{[1
,2
,8
]}

Leroux, Christine ^{[9
,10
]}

Castelluci, Dominique ^{[1
,2
]}

Gil, Evelyne ^{[1
,2
,3
]}

机构：

[1] Univ Clermont Ferrand, Clermont Univ, Inst Pascal, F-63000 Clermont Ferrand, France

[2] CNRS, UMR 6602, F-63178 Aubiere, France

[3] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia

[4] St Petersburg Acad Univ, Khlopina 8-3, St Petersburg 194021, Russia

[5] Russian Acad Sci, Ioffe Phys Tech Inst, Polytekhn Heskaya 26, St Petersburg 194021, Russia

[6] Univ Grenoble Alpes, F-38000 Grenoble, France

[7] CNRS, Inst Neel, F-38042 Grenoble, France

[8] Univ Auvergne, Inst Univ Technol, Dep Mesures Phys, F-63178 Aubiere, France

[9] Univ Sud Toulon Var, IM2NP, Bat R,BP 20132, F-83957 La Garde, France

[10] CNRS, UMR 6242, F-83957 La Garde, France

来源：

2016 INTERNATIONAL CONFERENCE LASER OPTICS (LO) | 2016年

关键词：

GaAs; IIVPE; Nanowire; Silicon; Self-catalyzed;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the first self -catalyzed growth of GaAs nanowires on patterned and non -patterned silicon (111) wafers by hydride vapor phase epitaxy (HVPE) with a record elongation rate of 30 !lm/h. The crystalline structure was analyzed using high resolution transmission electron microscopy (HRTEM). Self -catalyzed growth proceeds under gallium rich conditions at low -temperature (600 C). Nanowires exhibit cylindrical rod -like shape morphology with a mean diameter of 50 nm and are randomly distributed.

引用

收藏

页数：1

相关论文

共 50 条

[21] Low-temperature, self-catalyzed growth of Si nanowires [J].

Cuscuna, Massimo ;

Convertino, Annalisa ;

Mariucci, Luigi ;

Fortunato, Guglielmo ;

Felisari, Laura ;

Nicotra, Giuseppe ;

Spinella, Corrado ;

Pecora, Alessandro ;

Martelli, Faustino .

NANOTECHNOLOGY, 2010, 21 (25)

[22] Self-catalyzed growth of GaSb nanowires at low reaction temperatures [J].

Schulz, Stephan ;

Schwartz, Marcel ;

Kuczkowski, Andreas ;

Assenmacher, Wilfried .

JOURNAL OF CRYSTAL GROWTH, 2010, 312 (09) :1475-1480

[23] Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111) [J].

Zhang, Lichun ;

Geng, Xuewen ;

Zha, Guowei ;

Xu, Jianxing ;

Wei, Sihang ;

Ma, Ben ;

Chen, Zesheng ;

Shang, Xiangjun ;

Ni, Haiqiao ;

Niu, Zhichuan .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 52 :68-74

[24] Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111) [J].

Munshi, Abdul Mazid ;

Dheeraj, Dasa L. ;

Todorovic, Jelena ;

van Helvoort, Antonius T. J. ;

Weman, Helge ;

Fimland, Bjorn-Ove .

JOURNAL OF CRYSTAL GROWTH, 2013, 372 :163-169

[25] Growth of High-Quality Self-Catalyzed Core-Shell GaAsP Nanowires on Si Substrates [J].

Zhang, Yunyan ;

Aagesen, Martin ;

Sanchez, Ana M. ;

Wu, Jiang ;

Beanland, Richard ;

Ward, Thomas ;

Kim, Dongyoung ;

Jurczak, Pamela ;

Huo, Suguo ;

Liu, Huiyun .

QUANTUM DOTS AND NANOSTRUCTURES: GROWTH, CHARACTERIZATION, AND MODELING XIII, 2016, 9758

[26] Doping of Self-Catalyzed Nanowires under the Influence of Droplets [J].

Zhang, Yunyan ;

Sun, Zhiyuan ;

Sanchez, Ana M. ;

Ramsteiner, Manfred ;

Aagesen, Martin ;

Wu, Jiang ;

Kim, Dongyoung ;

Jurczak, Pamela ;

Huo, Suguo ;

Lauhon, Lincoln J. ;

Liu, Huiyun .

NANO LETTERS, 2018, 18 (01) :81-87

[27] Growth Mechanism of Self-Catalyzed Group III-V Nanowires [J].

Mandl, Bernhard ;

Stangl, Julian ;

Hilner, Emelie ;

Zakharov, Alexei A. ;

Hillerich, Karla ;

Dey, Anil W. ;

Samuelson, Lars ;

Bauer, Guenther ;

Deppert, Knut ;

Mikkelsen, Anders .

NANO LETTERS, 2010, 10 (11) :4443-4449

[28] Growth optimization for self-catalyzed GaAs-based nanowires on metal-induced crystallized amorphous substrate [J].

Ren, Dingding ;

Hoiaas, Ida M. ;

Reinertsen, Johannes F. ;

Dheeraj, Dasa L. ;

Munshi, A. Mazid ;

Kim, Dong-Chul ;

Weman, Helge ;

Fimland, Bjorn-Ove .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (02)

[29] Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth [J].

Nastovjak, A. G. ;

Shwartz, N. L. ;

Emelyanov, E. A. ;

Petrushkov, M. O. ;

Vasev, A. V. ;

Putyato, M. A. ;

Preobrazhenskii, V. V. .

SEMICONDUCTORS, 2020, 54 (14) :1850-1853

[30] Investigation of Self-Catalyzed GaAs NW Growth by Monte Carlo Simulation [J].

Suprunets, Anastasiya G. ;

Vasilenko, Maxim A. ;

Shwartz, Nataliya L. .

2014 15TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM), 2014, :14-18

← 1 2 3 4 5 →