Physics-based simulation of single-event effects

被引：117

作者：

Dodd, PE ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2005年 / 5卷 / 03期

关键词：

device modeling and simulation; integrated circuit reliability; integrated circuit scaling; integrated circuit testing; radiation effects; radiation hardening (electronics); radiation response; single event effects; single event latchup; single event transient; single event upset; soft errors;

D O I：

10.1109/TDMR.2005.855826

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews techniques for physics-based device-level simulation of single-event effects (SEEs) in Si microelectronic devices and integrated circuits. Issues for device modeling of SEE are discussed in the context of providing physical insight into mechanisms contributing to SEE as well as providing predictive capabilities for calculation of SEE rates. Recent advances in device simulation methodology are detailed, including full-cell simulations and cross-section calculations from first principles. Examples of the application of physics-based SEE simulations are presented, including scaling trends in soft error sensitivity as predicted by device simulation, single-event latchup (SEL) simulations in CMOS structures, and recent simulations of single-event transient (SET) production and propagation in digital logic circuits.

引用

页码：343 / 357

页数：15

共 116 条

[1] A PROPOSED SEU TOLERANT DYNAMIC RANDOM-ACCESS MEMORY (DRAM) CELL [J].