Active Area Uniformity of InGaAs/InP Single-Photon Avalanche Diodes

被引：30

作者：

Tosi, A. ^{[1
]}

Acerbi, F. ^{[1
]}

Dalla Mora, A. ^{[1
]}

Itzler, M. A. ^{[2
]}

Jiang, X. ^{[2
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Princeton Lightwave Inc, Cranbury, NJ 08512 USA

来源：

IEEE PHOTONICS JOURNAL | 2011年 / 3卷 / 01期

关键词：

Photodetectors; Single-Photon Avalanche Diodes (SPADs); photon counting; near-infrared detector; Avalanche Photodiode; PHOTODIODES; MULTIPLICATION; SUPPRESSION;

D O I：

10.1109/JPHOT.2010.2100037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a detailed characterization of the active area uniformity of InGaAs/InP Single-Photon Avalanche Diodes (SPADs) from two different design iterations. Nonuniformity of the electric field within the device active area has been measured through 2-D scans of detection efficiency and timing response to a pulsed laser. Additionally, we measured the near-infrared luminescence emitted by hot carriers during the avalanche. The nonuniformity is stronger at lower excess bias, with much higher and nonuniform electric field at the edge of the active area than expected, and it is fainter at higher excess bias, due to the saturation of the avalanche triggering efficiency. The main drawbacks are that the detection efficiency is position dependent when the SPAD is not fiber pigtailed and that the temporal response is worse, because of the nonuniform delay in the avalanche build-up across the SPAD active area.

引用

页码：31 / 41

页数：11

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