Gate depletion of an InSb two-dimensional electron gas

被引：14

作者：

Uddin, M. M. ^{[1
]}

Liu, H. W. ^{[1
,2
,3
,4
]}

Yang, K. F. ^{[1
,2
]}

Nagase, K. ^{[1
,2
]}

Sekine, K. ^{[1
]}

Gaspe, C. K. ^{[5
]}

Mishima, T. D. ^{[5
]}

Santos, M. B. ^{[5
]}

Hirayama, Y. ^{[1
,2
,6
]}

机构：

[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

[2] ERATO Nucl Spin Elect Project, Sendai, Miyagi 9808578, Japan

[3] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

[4] Jilin Univ, Inst Atom & Mol Phys, Changchun 130012, Peoples R China

[5] Univ Oklahoma, Homer L Dodge Dept Phys & Astron, Norman, OK 73019 USA

[6] Tohoku Univ, Adv Inst Mat Res, WPI Res Ctr, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 12期

关键词：

QUANTUM-WELLS; GIANT; DEVICES; AL2O3; LAYER;

D O I：

10.1063/1.4821106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of Al0.1In0.9Sb compared to InSb resulted in a linear, sharp, and non-hysteretic response of the 2DEG density to gate bias in the structure with an Al0.1In0.9Sb surface layer. In contrast, a nonlinear, slow, and hysteretic (nonvolatile-memory-like) response was observed in the structure with an InSb surface layer. The 2DEG with the Al0.1In0.9Sb surface layer was completely depleted by application of a small gate voltage (similar to -0.9 V). (C) 2013 AIP Publishing LLC.

引用

页数：4

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