Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces

被引：39

作者：

Ahn, Jaesoo ^{[1
]}

Kent, Tyler ^{[2
]}

Chagarov, Evgueni ^{[2
]}

Tang, Kechao ^{[1
]}

Kummel, Andrew C. ^{[2
]}

McIntyre, Paul C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Univ Calif San Diego, Dept Chem & Biochem, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期

关键词：

TOTAL-ENERGY CALCULATIONS; AUGMENTED-WAVE METHOD; BASIS-SET; DIELECTRICS; AL2O3; MOS;

D O I：

10.1063/1.4818330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interrelated effects of initial surface preparation and precursor predosing on defect passivation of atomic layer deposited (ALD) Al2O3/InGaAs(100) interfaces are investigated. Interface trap distributions are characterized by capacitance-voltage and conductance-voltage analysis of metal-oxide-semiconductor capacitors. Thermal desorption conditions for a protective As-2 layer on the InGaAs surface and dosing conditions of trimethylaluminum prior to ALD-Al2O3 are varied to alter the interface trap densities. Experimental results are consistent with the predictions of ab initio electronic structure calculations showing that trimethylaluminum dosing of the As-rich In0.53Ga0.47As(100) surface suppresses interface traps by passivating As dangling bonds prior to the initiation of Al2O3 deposition. (C) 2013 AIP Publishing LLC.

引用

页数：4

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