Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition

被引：23

作者：

Li, Huijin ^{[1
]}

Han, Dedong ^{[1
]}

Dong, Junchen ^{[1
]}

Yu, Wen ^{[2
]}

Liang, Yi ^{[1
]}

Luo, Zhen ^{[1
]}

Zhang, Shengdong ^{[2
]}

Zhang, Xing ^{[1
]}

Wang, Yi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2018年 / 439卷

基金：

中国国家自然科学基金;

关键词：

Dual-layer channel; Thin film transistors; Atomic layer deposition; ZnO; HIGH-MOBILITY; ACTIVE-LAYER; TEMPERATURE; FABRICATION; VOLTAGE;

D O I：

10.1016/j.apsusc.2017.12.234

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The thin film transistors (TFTs) with a dual-layer channel structure combing ZnO thin layer grown at 200 degrees C and ZnO film grown at 120 degrees C by atomic layer deposition are fabricated. The dual-layer channel TFT exhibits a low leakage current of 2.8 x 10(-13) A, I-on/I-off ratio of 3.4 x 10(9), saturation mobility mu(sat) of 12 cm(2) V-1 s(-1), subthreshold swing (SS) of 0.25 V/decade. The SS value decreases to 0.18 V/decade after the annealing treatment in O-2 due to the reduction of the trap states at the channel/dielectric interface and in the bulk channel layer. The enhanced performance obtained from the dual- layer channel TFTs is due to the ability of maintaining high mobility and suppressing the increase in the off-current at the same time. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：632 / 637

页数：6

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