Lateral Photoconductivity in Structures with Ge/Si Quantum Dots

被引：13
|
作者：
Panevin, V. Yu. [1 ]
Sofronov, A. N. [1 ]
Vorobjev, L. E. [1 ]
Firsov, D. A. [1 ]
Shalygin, V. A. [1 ]
Vinnichenko, M. Ya. [1 ]
Balagula, R. M. [1 ]
Tonkikh, A. A. [2 ,5 ]
Werner, P. [2 ]
Fuhrman, B. [3 ]
Schmidt, G. [4 ]
机构：
[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Saale, Germany
[3] Univ Halle Wittenberg, IZM, D-06120 Halle, Saale, Germany
[4] Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Saale, Germany
[5] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2013年 / 47卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
Photocurrent Spectrum; Photoconductivity Spectrum; Valence Band Discontinuity; Reverse Trapping; Lateral Photoconductivity;
D O I：
10.1134/S1063782613120154
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground state are revealed in the optical spectra. Temperature photoconductivity quenching caused by the reverse trapping of nonequilibrium free holes by the QD bound state is observed. The obtained experimental data make it possible to determine the height of the surface band bending at the QD heterointerface.
引用
收藏
页码：1574 / 1577
页数：4
相关论文
共 50 条
  • [21] Intraband absorption and interband photoconductivity transients in Ge/Si quantum dots
    Kirilenko, O. I.
    Balagula, R. M.
    Sofronov, A. N.
    Firsov, D. A.
    Vorobjev, L. E.
    18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2017, 816
  • [22] Photoresistance of Si/Ge/Si structures with germanium quantum dots
    Shegai, OA
    Zhuravlev, KS
    Markov, VA
    Nikiforov, AI
    Pchelyakov, OP
    SEMICONDUCTORS, 2000, 34 (11) : 1311 - 1315
  • [23] Photoresistance of Si/Ge/Si structures with germanium quantum dots
    O. A. Shegai
    K. S. Zhuravlev
    V. A. Markov
    A. I. Nikiforov
    O. P. Pchelyakov
    Semiconductors, 2000, 34 : 1311 - 1315
  • [24] Negative interband photoconductivity in Ge/Si heterostructures with quantum dots of the second type
    A. I. Yakimov
    A. V. Dvurechenskii
    A. I. Nikiforov
    O. P. Pchelyakov
    Journal of Experimental and Theoretical Physics Letters, 2000, 72 : 186 - 189
  • [25] Negative interband photoconductivity in Ge/Si heterostructures with quantum dots of the second type
    Yakimov, AI
    Dvurechenskii, AV
    Nikiforov, AI
    Pchelyakov, OP
    JETP LETTERS, 2000, 72 (04) : 186 - 189
  • [26] Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots
    Talochkin, A. B.
    Cherkov, A. G.
    NANOTECHNOLOGY, 2009, 20 (34)
  • [27] Raman E0 resonance of Ge quantum dots in Si/Ge/Si structures
    Talochkin, AB
    Efanov, AV
    Markov, VA
    Nikiforov, AI
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1999, 63 (02): : 290 - 298
  • [28] Quantum dots in Si-Ge structures synthesized by Ge ion implantation into Si wafers
    Parkhomenko, YN
    Gerasimenko, NN
    NANOSTRUCTURED THIN FILMS AND NANODISPERSION STRENGTHENED COATINGS, 2004, 155 : 203 - 208
  • [29] Photoconductivity gain by Si⟨Ge⟩ p-n junction containing quantum dots
    Dvurechenskii, AV
    Ryazantsev, IA
    Kovchavsev, AP
    Kuryshev, GL
    Nikivorov, AI
    Pchelyakov, OP
    17TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 2003, 5126 : 167 - 177
  • [30] PHOTOCONDUCTIVITY AND FIELD-ASSISTED PHOTOEMISSION IN MULTILAYER Si/Ge HETEROSTRUCTURES WITH QUANTUM DOTS
    Kondratenko, S. V.
    Vakulenko, O. V.
    Kozyrev, Yu. N.
    Rubezhanska, M. Yu.
    Dadykin, A. A.
    Naumovets, A. G.
    Hofer, C.
    Teichert, C.
    UKRAINIAN JOURNAL OF PHYSICS, 2010, 55 (04): : 381 - 387
12345