Lateral Photoconductivity in Structures with Ge/Si Quantum Dots

被引：13
|
作者：
Panevin, V. Yu. [1 ]
Sofronov, A. N. [1 ]
Vorobjev, L. E. [1 ]
Firsov, D. A. [1 ]
Shalygin, V. A. [1 ]
Vinnichenko, M. Ya. [1 ]
Balagula, R. M. [1 ]
Tonkikh, A. A. [2 ,5 ]
Werner, P. [2 ]
Fuhrman, B. [3 ]
Schmidt, G. [4 ]
机构：
[1] St Petersburg State Polytech Univ, St Petersburg 195251, Russia
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Saale, Germany
[3] Univ Halle Wittenberg, IZM, D-06120 Halle, Saale, Germany
[4] Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Saale, Germany
[5] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
SEMICONDUCTORS | 2013年 / 47卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
Photocurrent Spectrum; Photoconductivity Spectrum; Valence Band Discontinuity; Reverse Trapping; Lateral Photoconductivity;
D O I：
10.1134/S1063782613120154
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The spectra of lateral photoconductivity and optical absorption caused by the intraband optical transitions of holes in Ge/Si quantum dots are studied at different lattice temperatures. Polarization-dependent spectral features related to the transitions of holes from the quantum dot (QD) ground state are revealed in the optical spectra. Temperature photoconductivity quenching caused by the reverse trapping of nonequilibrium free holes by the QD bound state is observed. The obtained experimental data make it possible to determine the height of the surface band bending at the QD heterointerface.
引用
收藏
页码：1574 / 1577
页数：4
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