Link-up of 90 degrees domain boundaries with interface dislocations in BaTiO3/LaAlO3

被引：30
作者：
Dai, ZR
Wang, ZL
Duan, XF
Zhang, JM
机构：
[1] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA
[2] BEIJING UNIV SCI & TECHNOL,DEPT MAT PHYS,BEIJING 100083,PEOPLES R CHINA
[3] ADV TECHNOL MAT INC,DANBURY,CT 06810
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 22期
关键词：
D O I：
10.1063/1.116433
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interface microstructures of BaTiO3/LaA1O(3) grown by metalorganic chemical vapor deposition (MOCVD) are studied using high-resolution transmission electron microscopy (HRTEM). Interface dislocations in BaTiO3/LaAlO3 have been shown to be directly linked up with the 90 degrees domain boundaries in BaTiO3. This association is a result of strain relief due to a phase transformation when cooled down from the growth temperature. The Burgers vector of the interface dislocations is [010]. (C) 1996 American Institute of Physics.
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页码：3093 / 3095
页数：3
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