Link-up of 90 degrees domain boundaries with interface dislocations in BaTiO3/LaAlO3

被引：30

作者：

Dai, ZR

Wang, ZL

Duan, XF

Zhang, JM

机构：

[1] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA

[2] BEIJING UNIV SCI & TECHNOL,DEPT MAT PHYS,BEIJING 100083,PEOPLES R CHINA

[3] ADV TECHNOL MAT INC,DANBURY,CT 06810

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 22期

关键词：

D O I：

10.1063/1.116433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interface microstructures of BaTiO3/LaA1O(3) grown by metalorganic chemical vapor deposition (MOCVD) are studied using high-resolution transmission electron microscopy (HRTEM). Interface dislocations in BaTiO3/LaAlO3 have been shown to be directly linked up with the 90 degrees domain boundaries in BaTiO3. This association is a result of strain relief due to a phase transformation when cooled down from the growth temperature. The Burgers vector of the interface dislocations is [010]. (C) 1996 American Institute of Physics.

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页码：3093 / 3095

页数：3

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