Effect of Ar on Polycrystalline Si Films Deposited by ECR-PECVD using SiH4

被引：0

作者：

Cheng, Hua ^{[1
,3
]}

Wu, Aimin ^{[2
]}

Shi, Nanlin ^{[1
]}

Wen, Lishi ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China

[2] Dalian Univ Technol, Dalian 116024, Peoples R China

[3] Armor Tech Inst PLA, Changchun 130117, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2008年 / 24卷 / 05期

关键词：

Ar flow rate; ECR-PECVD; Poly-Si; Thin Films;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, polycrystalline silicon films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using SiH4/Ar and SiH4/H-2 gaseous mixture. Effects of argon flow rate on the deposition efficiency and the film property were investigated by comparing with H-2. The results indicated that the deposition rate of using Ar as discharge gas was 1.5-2 times higher than that of using H-2, while the preferred orientations and the grain sizes of the films were analogous. Film crystallinity increased with the increase of Ar flow rate. Optimized flow ratio of SiH4 to Ar was obtained as F(SiH4): F(Ar)=10:70 for the highest deposition rate.

引用

页码：690 / 692

页数：3

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