P-type behavior of Sb doped ZnO from p-n-p memory structure

被引：15

作者：

Huang, Jian ^{[1
]}

Li, Zonglin ^{[1
]}

Chu, Sheng ^{[1
]}

Liu, Jianlin ^{[1
]}

机构：

[1] Univ Calif Riverside, Quantum Struct Lab, Dept Elect Engn, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 23期

关键词：

FILMS; EPITAXY;

D O I：

10.1063/1.4769097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Antimony (Sb) doped p-type ZnO was studied by using Sb-ZnO/ZnO/Sb-ZnO p-n-p structure. Secondary ion mass spectrometry result confirmed the formation of the structure. Rectifying current-voltage characteristics between Sb-ZnO and undoped ZnO layers were achieved, proving the p-n junction was formed. The p-type behavior from the p-n-p structure was studied by using the capacitance-voltage measurement and small signal model. The voltage operation led to the charging/discharging of the structure, showing nonvolatile memory effect. Very long retention time was achieved. This research suggests that p-type ZnO can be evaluated by a p-n-p structure, which could be promising for future nonvolatile memory applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769097]

引用

页数：4

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