High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates

被引：55
作者：
Green, BM
Tilak, V
Lee, S
Kim, H
Smart, JA
Webb, KJ
Shealy, JR
Eastman, LF
机构：
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[2] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[3] RF Nitro Commun Inc, Charlotte, NC 28269 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 12期
关键词：
broad-band amplifier; cascode; distributed amplifier; GaN; high electron-mobility transistor; silicon carbide;
D O I：
10.1109/22.971640
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Broad-band high-power cascode AlGaN/GaN high elect ron-mobility transistor monolithic-microwave integrated-circuit (MMIC) amplifiers with high gain and power-added efficiency (PAE) have been fabricated on high-thermal conductivity SiC substrates. A cascode gain cell exhibiting 5 W of power at 8 GHz with a small-signal gain of 19 dB was realized. A nonuniform distributed amplifier (NDA) based on this process was designed, fabricated, and tested, yielding a saturated output power of 3-6 W over a dc-8-GHz bandwidth with an associated PAE of 13%-31%. A broad-band amplifier MMIC using cascode cells in conjunction with a lossy-match input matching network showed a useful operating range of dc-8 GHz with an output power of 5-7.5 W and a PAE of 20%-33% over this range. The third-order intermodulation products of the amplifiers under two-tone excitation were studied and third-order-intercept values of 42 and 43 dBm (computed using two-tone carrier power) for the lossy match and NDA amplifiers were obtained.
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页码：2486 / 2493
页数：8
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