Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions

被引:0
作者
Verevkin, AA [1 ]
Ptitsina, NG [1 ]
Chulcova, GM [1 ]
Goltsman, GN [1 ]
Gershenzon, EM [1 ]
Yngvesson, KS [1 ]
机构
[1] UNIV MASSACHUSETTS, DEPT ELECT & COMP ENGN, AMHERST, MA 01003 USA
关键词
aluminum; arsenic; electrical transport measurements; energy dissipation; gallium; gallium arsenide; heterojunctions; photoconductivity; semiconducting films; semiconductor-semiconductor heterostructures; semiconductor-semiconductor interfaces;
D O I
10.1016/0039-6028(96)00471-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
For the first lime, results are presented of a direct measurement of the energy relaxation time tau(epsilon) of 2D electrons in an AlGaAs/GaAs heterojunction at T=1 and 5-20 K. A weak temperature dependence of tau(epsilon) for the T>4 K range and a linear temperature dependence of the reciprocal of tau(epsilon) for T<4K have been observed. The linear dependence tau(epsilon)(-1)approximate to T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of tau(epsilon) in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
引用
收藏
页码:569 / 573
页数:5
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