Two-Dimensional Semimetal in Wide HgTe Quantum Wells: Charge-Carrier Energy Spectrum and Magnetotransport

被引：3
|
作者：
Germanenko, A. V. [1 ]
Minkov, G. M. [2 ]
Rut, O. E. [1 ]
Sherstobitov, A. A. [2 ]
Dvoretsky, S. A. [3 ]
Mikhailov, N. N. [3 ]
机构：
[1] Ural Fed Univ, Inst Nat Sci, Ekaterinburg 620000, Russia
[2] Russian Acad Sci, Inst Met Phys, Ural Branch, Ekaterinburg 620990, Russia
[3] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2013年 / 47卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
SEMICONDUCTOR; STATES;
D O I：
10.1134/S1063782613120063
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The magnetoresistivity and the Hall and Shubnikov-de Haas effects in heterostructures with a single 20.2-nm-wide quantum well made from the gapless semiconductor HgTe are studied experimentally. The measurements are performed on gated samples over a wide range of electron and hole densities. The data obtained are used to reconstruct the energy spectrum of electrons and holes in the vicinity of the extrema of the quantum-confinement subbands. It is shown that the charge-carrier dispersion relation in the investigated systems differs from that calculated within the framework of the conventional kp model.
引用
收藏
页码：1562 / 1566
页数：5
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