Structural and magnetic properties of frustrated GaxMn(3-x)O4(1.2 ≤ x ≤ 1.6) spinels
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作者:
Mehdaoui, B.
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Univ Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, Morocco
Univ Rennes 1, UMR 6226, Inst Sci Chim Rennes, F-35042 Rennes, FranceUniv Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, Morocco
Mehdaoui, B.
[1
,2
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Moubah, R.
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Univ Hassan II Casablanca, Fac Sci Ain Chock, LPMMAT, BP 5366, Casablanca, MoroccoUniv Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, Morocco
Moubah, R.
[3
]
Orayech, B.
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CIC Energigune, Albert Einstein 48, Minano 01510, Alava, SpainUniv Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, Morocco
Orayech, B.
[4
]
Bahout, M.
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Univ Rennes 1, UMR 6226, Inst Sci Chim Rennes, F-35042 Rennes, FranceUniv Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, Morocco
Bahout, M.
[2
]
Pena, O.
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Univ Rennes 1, UMR 6226, Inst Sci Chim Rennes, F-35042 Rennes, FranceUniv Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, Morocco
Pena, O.
[2
]
Jauregui, M.
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CIC Energigune, Albert Einstein 48, Minano 01510, Alava, SpainUniv Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, Morocco
Jauregui, M.
[4
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Saurel, D.
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CIC Energigune, Albert Einstein 48, Minano 01510, Alava, SpainUniv Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, Morocco
Saurel, D.
[4
]
El Bouari, A.
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Univ Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, MoroccoUniv Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, Morocco
El Bouari, A.
[1
]
机构:
[1] Univ Hassan II Casablanca, Fac Sci Ben MSik, LPCMA, BP 7955, Casablanca, Morocco
[2] Univ Rennes 1, UMR 6226, Inst Sci Chim Rennes, F-35042 Rennes, France
[3] Univ Hassan II Casablanca, Fac Sci Ain Chock, LPMMAT, BP 5366, Casablanca, Morocco
[4] CIC Energigune, Albert Einstein 48, Minano 01510, Alava, Spain
We report a systematic study of the structural and magnetic properties of frustrated compounds of (GaMn(3-x)O4)-Mn-x(1.2 <= x <= 1.6) prepared by solid-state reaction. Using Rietveld refinement of X-ray diffraction patterns and O'Neill-Navrotsky model, we demonstrate that the system GaxMn(3-x)O4(1.2 <= x <= 1.6) is an inverse spinel with low inversion parameter, in which Ga3+ replaces Mn3+ cations located in B-sites. The inverse magnetic susceptibility, the shape of ZFC/FC magnetization curves at low temperatures, the existence of hysteresis in all compounds, the frustration parameter and the spontaneous magnetization analysis show that the compounds with x = 1.2e1.4 exhibit a non-collinear ferrimagnetic order and the compounds with x = 1.5e1.6 exhibit a frustrated non-collinear ferrimagnetic order. Spin wave stiffness parameters were determined for each composition using the fitting results of spontaneous magnetization curves. It is demonstrated that for the compounds x = 1.2e1.4 with a nonfrustrated ferrimagnetic order, the change of spontaneous magnetization Ms(T) obeys to Bloch's law (T-3/2). For x = 1.5-1.6, the compounds exhibit a frustrated ferrimagnetic order, and the Ms(T) shows a deviation from Bloch's law. (C) 2018 Elsevier B.V. All rights reserved.
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, Kyoung Sun
Han, Seung Ho
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Han, Seung Ho
Kim, Ho Gi
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Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, Ho Gi
Lee, Young Taek
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Hoseo Univ, Dept Mat Sci & Engn, Asan 336795, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Lee, Young Taek
Kim, Kyoung A.
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Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, Kyoung A.
Kim, Jeong Seog
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Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, Jeong Seog
Cheon, Chae Il
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Hoseo Univ, Dept Mat Sci & Engn, Asan 336795, South Korea
Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
机构:
Univ Tokyo, Grad Sch Arts & Sci, Dept Basic Sci, Tokyo 1538902, JapanSepuluh Nopember Inst Technol ITS, Fac Math & Nat Sci, Dept Phys, Surabaya 60111, Indonesia
Kojima, Norimichi
Pratapa, Suminar
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Sepuluh Nopember Inst Technol ITS, Fac Math & Nat Sci, Dept Phys, Surabaya 60111, IndonesiaSepuluh Nopember Inst Technol ITS, Fac Math & Nat Sci, Dept Phys, Surabaya 60111, Indonesia
Pratapa, Suminar
Darminto
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Sepuluh Nopember Inst Technol ITS, Fac Math & Nat Sci, Dept Phys, Surabaya 60111, IndonesiaSepuluh Nopember Inst Technol ITS, Fac Math & Nat Sci, Dept Phys, Surabaya 60111, Indonesia