Picosecond response of gallium-nitride metal-semiconductor-metal photodetectors

被引：41
作者：
Li, JL
Xu, Y
Hsiang, TY
Donaldson, WR
机构：
[1] Univ Rochester, Laser Energet Lab, Mat Sci Program, Rochester, NY 14623 USA
[2] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 12期
关键词：
D O I：
10.1063/1.1688454
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal-semiconductor-metal ultraviolet photodiodes fabricated on GaN were tested in the picosecond regime with an electro-optic sampling system. A device with a feature size of 1 mum showed a response with 1.4 ps rise time and 3.5 ps full width at half maximum. The derived electron velocity, 1.43x10(7) cm/s, is in good agreement with independent photoexcitation measurements. A slower impulse response was observed in a device with smaller feature size of 0.5 mum. (C) 2004 American Institute of Physics.
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页码：2091 / 2093
页数：3
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