Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs

被引：0

作者：

Thorsell, M. ^{[1
]}

Andersson, K. ^{[1
]}

Fagerlind, M. ^{[1
]}

Sudow, M. ^{[1
]}

Nilsson, P. -A. ^{[1
]}

Rorsman, N. ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Microwave Elect Lab, GigaHertz Ctr, SE-41296 Gothenburg, Sweden

来源：

2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年

关键词：

Noise; gallium-nitride; thermal;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the high-frequency noise performance of the AlGaN/GaN-HEMT. The intrinsic noise sources are extracted and a noise model is derived and verified for a MMIC amplifier.

引用

页码：462 / 465

页数：4

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