Exploring ultrafast negative Kerr effect for mode-locking vertical external-cavity surface-emitting lasers

被引:48
作者
Albrecht, Alexander R. [1 ]
Wang, Yi [1 ]
Ghasemkhani, Mohammadreza [1 ]
Seletskiy, Denis V. [2 ,3 ]
Cederberg, Jeffrey G. [4 ]
Sheik-Bahae, Mansoor [1 ]
机构
[1] Univ New Mexico, Dept Phys & Astron, Albuquerque, NM 87131 USA
[2] Univ Konstanz, Dept Phys, D-78457 Constance, Germany
[3] Univ Konstanz, Ctr Appl Photon, D-78457 Constance, Germany
[4] Sandia Natl Labs, Albuquerque, NM 87185 USA
基金
美国国家科学基金会;
关键词
SEMICONDUCTOR DISK LASER; NONLINEAR REFRACTION; OUTPUT POWER; GENERATION; AMPLIFIERS; INDEX; DISPERSION; DYNAMICS; ALGAAS; PULSES;
D O I
10.1364/OE.21.028801
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present analytical considerations of "self-mode-locked" operation in a typical vertical external-cavity surface-emitting laser (VECSEL) cavity geometry by means of Kerr lens action in the semiconductor gain chip. We predict Kerr-lens mode-locked operation for both soft-and hard-apertures placed at the optimal intra-cavity positions. These predictions are experimentally verified in a Kerr-lens mode-locked VECSEL capable of producing pulse durations of below 500 fs at 1 GHz repetition rate. (C) 2013 Optical Society of America
引用
收藏
页码:28801 / 28808
页数:8
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