High transition temperature superconductor/insulator bilayers for the development of ultra-fast electronics

被引：6

作者：

Sirena, M. ^{[1
,2
,3
]}

Aviles Felix, L. ^{[1
,2
,3
]}

Haberkorn, N. ^{[1
]}

机构：

[1] CNEA, Ctr Atom Bariloche, Consejo Nacl Invest Cient & Tecn, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

[2] Univ Nacl Cuyo, Inst Balseiro, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

[3] CNEA, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 05期

关键词：

ROOM-TEMPERATURE; TUNNEL-JUNCTIONS; FILM;

D O I：

10.1063/1.4816416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High transition temperature superconductor (HTc)/SrTiO3 (STO) bilayers were fabricated by sputtering deposition on (100) STO substrates. Their transport and morphological properties were characterized using conductive atomic force microscopy. The STO barriers present good insulating properties, with long attenuation lengths (lambda similar to 1 nm) which reduce the junction resistance and increase the operating critical current. The samples present roughness values smaller than 1 nm, with an extremely low density of surface defects (similar to 5 x 10(-5) defects/mu m(2)). The high control of the barrier quality over large defect free surfaces is encouraging for the development of microelectronics devices based in HTc Josephson junctions. (C) 2013 AIP Publishing LLC.

引用

页数：5