Power scaling of coherent terahertz pulses by stacking GaAs wafers

被引：11

作者：

Jiang, Yi ^{[1
]}

Ding, Yujie J. ^{[1
]}

Zotova, Ioulia B. ^{[2
]}

机构：

[1] Lehigh Univ, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA

[2] ArkLight, Center Valley, PA 18034 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 24期

关键词：

gallium arsenide; III-V semiconductors; scaling phenomena; submillimetre wave generation;

D O I：

10.1063/1.3049592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that the average output power of the terahertz pulses generated by difference-frequency generation in stacked GaAs wafers is scaled up by a factor of 160. Such power scaling is made possible by achieving first-order quasiphase matching for the efficient terahertz conversion in stacked 590 mu m thick (110) GaAs wafers using two CO2 laser pulses. The highest average output power is measured to be 29.8 mu W by stacking ten wafers.

引用

页数：3

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