Calculation of the bending area of threading dislocations of InGaAs quantum dots on a GaAs substrate

被引：3

作者：

Zhou, Shuai ^{[1
]}

Liu, Yumin ^{[1
]}

Wang, Donglin ^{[1
]}

Yu, Zhongyuan ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Inst Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2013年 / 63卷

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

InAs/GaAs quantum dots; Dislocation; Critical misfit; Bending area; INAS/GAAS; LASERS; ISLANDS; MISFIT;

D O I：

10.1016/j.spmi.2013.08.008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An equilibrium approach is used to calculate the strain energy of InGaAs/GaAs quantum dots (QDs) before and after the onset of bending of threading dislocation (TD) into interfacial misfit dislocation (MD). The energy balance method is adopted to predict critical conditions for TD bending. We find that the critical bending area in which the inclination of TD is energetically favorable depends strongly on the QD component. The results provide guidelines for the design of quantum dot dislocation filter. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：29 / 35

页数：7

共 21 条

[1] Self-assembled InAs quantum dots and wires grown on a cleaved-edge GaAs(110) surface [J].

Blumin, M. ;

Ruda, H. E. ;

Savelyev, I. G. ;

Shik, A. ;

Wang, H. .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)

[2] BREAKDOWN OF CONTINUUM ELASTICITY THEORY IN THE LIMIT OF MONATOMIC FILMS [J].

BRANDT, O ;

PLOOG, K ;

BIERWOLF, R ;

HOHENSTEIN, M .

PHYSICAL REVIEW LETTERS, 1992, 68 (09) :1339-1342

[3] A non-singular continuum theory of dislocations [J].

Cai, W ;

Arsenlis, A ;

Weinberger, CR ;

Bulatov, VV .

JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS, 2006, 54 (03) :561-587

[4] REDUCED EFFECTIVE MISFIT IN LATERALLY LIMITED STRUCTURES SUCH AS EPITAXIAL ISLANDS [J].

CHRISTIANSEN, S ;

ALBRECHT, M ;

STRUNK, HP ;

HANSSON, PO ;

BAUSER, E .

APPLIED PHYSICS LETTERS, 1995, 66 (05) :574-576

[5] STRAINED STATE OF GE(SI) ISLANDS ON SI - FINITE-ELEMENT CALCULATIONS AND COMPARISON TO CONVERGENT-BEAM ELECTRON-DIFFRACTION MEASUREMENTS [J].

CHRISTIANSEN, S ;

ALBRECHT, M ;

STRUNK, HP ;

MAIER, HJ .

APPLIED PHYSICS LETTERS, 1994, 64 (26) :3617-3619

[6] Pyramids and domes in the InAs/GaAs(001) and Ge/Si(001) systems [J].

Costantini, G ;

Rastelli, A ;

Manzano, C ;

Acosta-Diaz, P ;

Katsaros, G ;

Songmuang, R ;

Schmidt, OG ;

Von Känel, H ;

Kern, K .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :38-45

[7] Modeling the plastic relaxation onset in realistic SiGe islands on Si(001) [J].

Gatti, R. ;

Marzegalli, A. ;

Zinovyev, V. A. ;

Montalenti, F. ;

Miglio, Leo .

PHYSICAL REVIEW B, 2008, 78 (18)

[8] Self organized defect free InAs/GaAs and InAs/InGaAs/GaAs quantum dots with high lateral density grown by MOCVD [J].

Heinrichsdorff, F ;

Krost, A ;

Bimberg, D ;

Kosogov, AO ;

Werner, P .

APPLIED SURFACE SCIENCE, 1998, 123 :725-728

[9]

Hirth J.P., 1982, Theory of Dislocations

[10] High performance quantum dot lasers on GaAs substrates operating in 1.5μm range [J].

Ledentsov, NN ;

Kovsh, AR ;

Zhukov, AE ;

Maleev, NA ;

Mikhrin, SS ;

Vasil'ev, AP ;

Sernenova, ES ;

Maximov, MV ;

Shernyakov, YM ;

Kryzhanovskaya, N ;

Ustinov, V ;

Bimberg, D .

ELECTRONICS LETTERS, 2003, 39 (15) :1126-1128

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