Advanced chemical mechanical planarization (CMP) process for copper interconnects

被引：0

作者：

Hara, T ^{[1
]}

机构：

[1] Hosei Univ, Koganei, Tokyo 1840002, Japan

来源：

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chemical mechanical planarization (CMP) of copper dual Damascene is described. Dishing of copper layer can be controlled by the CMP employing non-abrassive MnO2 slurry. Removal rate ratio of the Cu/barrier layer can be reduced from 2.8 to unity with doping of antioxide additive in the slurry. Dishing still appears at the rate of 2.8 and dishing free CMP can be attained at unit. Scratches are formed in this CMP.

引用

页码：386 / 390

页数：5

共 10 条

[1] FUJIWARA T, 1998, P 17 ION BEAM S HOS, P67
[2] Barrier properties for oxygen diffusion in a TaSiN layer
Hara, T
Tanaka, M
Sakiyama, K
Onishi, S
Ishihara, K
Kudo, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (7B): : L893 - L895
[3] HARA T, 2001, ELECTROCHEMICAL SOLI, V4
[4] HARA T, 2000, P 7 INT VLSI MULT IN, P459
[5] HARA T, 2001, ELECTROCHEMICAL NOV
[6] HARA T, 2001, ELECTROCHEMICAL OCT
[7] HARA T, 1996, J ELECTROCHEM SOC, V143, P264
[8] MATSUNAGA M, 1966, REPORT I IND SCI, P109
[9] Diffusion barrier property of TaN between Si and Cu
Oku, T
Kawakami, E
Uekubo, M
Takahiro, K
Yamaguchi, S
Murakami, M
[J]. APPLIED SURFACE SCIENCE, 1996, 99 (04) : 265 - 272
[10] YOSHIDA Y, IN PRESS JAPAN J APP

← 1 →