CdZnS quantum dots formed by the Langmuir-Blodgett technique

被引：12

作者：

Milekhin, Alexander G. ^{[1
]}

Yeryukov, Nikolay A. ^{[2
]}

Sveshnikova, Larisa L. ^{[2
]}

Duda, Tatyana A. ^{[2
]}

Protasov, Dmitry Yu ^{[2
]}

Gutakovskii, Anton K. ^{[2
]}

Batsanov, Stepan A. ^{[2
]}

Surovtsev, Nikolay V. ^{[3
]}

Adichtchev, Sergey V. ^{[3
]}

Himcinschi, Cameliu ^{[4
]}

Dzhagan, Volodymir ^{[5
]}

Haidu, Francisc ^{[6
]}

Zahn, Dietrich R. T. ^{[6
]}

机构：

[1] Novosibirsk State Univ, AV Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[2] AV Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Russian Acad Sci, Inst Automat & Electrometry, Novosibirsk 630090, Russia

[4] Tech Univ Bergakad Freiberg, Inst Theoret Phys, D-09596 Freiberg, Germany

[5] V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine

[6] Tech Univ Chemnitz, D-09107 Chemnitz, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 04期

关键词：

RAMAN-SCATTERING; CDS1-XSEX NANOCRYSTALS; CD1-XZNXS NANOCRYSTALS; BOROSILICATE GLASS; SIZE-QUANTIZATION; SOLID-SOLUTIONS; OXIDE GLASS; THIN-FILMS; LB FILMS; CDS;

D O I：

10.1116/1.4810782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CdZnS quantum dots (QDs) with systematically varied Zn content (from 0 to 100%) are formed in an organic matrix using the Langmuir-Blodgett technique. Annealing of the QD structures leads to a removal of the organic matrix and an increase in the Zn content for free-standing CdZnS QDs. After annealing, the size of QDs as determined from UV-vis absorption experiments is in good agreement with electron microscopy measurements. Analysis of UV-vis absorption and Raman scattering data demonstrates strong changes in the content of the CdZnS QDs upon annealing. A model of the process of QD formation is developed using the precipitation model and is found to adequately describe the experimental results. (C) 2013 American Vacuum Society.

引用

页数：7

共 50 条

[41] Crystal Structure and Predominant Defects in CdS Quantum Dots Fabricated by the Langmuir-Blodgett Method
Svit, Kirill A.
Zarubanov, Alexandr A.
Duda, Tatyana A.
Trubina, Svetlana, V
Zvereva, Valentina V.
Fedosenko, Evgeniy, V
Zhuravlev, Konstantin S.
LANGMUIR, 2021, 37 (18) : 5651 - 5658
[42] Rare-earth-containing planar magnetic materials formed using Langmuir-Blodgett technique
Khomutov, GB
Koksharov, YA
Radchenko, IL
Soldatov, ES
Trifonov, AS
Tishin, AM
Bohr, J
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 1999, 8-9 : 299 - 308
[43] Optical vibration modes in (Cd, Pb, Zn)S quantum dots in the Langmuir-Blodgett matrix
Milekhin, AG
Sveshnikova, LL
Repinskii, SM
Gutakovskii, AK
Friedrich, M
Zahn, DRT
PHYSICS OF THE SOLID STATE, 2002, 44 (10) : 1976 - 1980
[44] Synthesis and Characterization of CuxS (x=1-2) Nanocrystals Formed by the Langmuir-Blodgett Technique
Yeryukov, Nikolay A.
Milekhin, Alexander G.
Sveshnikova, Larisa L.
Duda, Tatyana A.
Pokrovsky, Lev D.
Gutakovskii, Anton K.
Batsanov, Stepan A.
Rodyakina, Ekaterina E.
Latyshev, Alexander V.
Zahn, Dietrich R. T.
JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (40): : 23409 - 23414
[45] II-VI semiconductor nanoparticles formed by Langmuir-Blodgett film technique: Optical study
Nabok, A
Iwantono
Ray, A
Hassan, A
Ruban, A
PROCEEDINGS OF THE 2002 2ND IEEE CONFERENCE ON NANOTECHNOLOGY, 2002, : 261 - 264
[46] Colloidal photonic crystals obtained by the Langmuir-Blodgett technique
Reculusa, S
Ravaine, S
APPLIED SURFACE SCIENCE, 2005, 246 (04) : 409 - 414
[47] Organization of a new tetraalkynyl porphyrin by the Langmuir-Blodgett technique
Da Cruz, F
Armand, F
Albouy, PA
Nierlich, M
Ruaudel-Teixier, A
LANGMUIR, 1999, 15 (10) : 3653 - 3660
[48] Optical vibration modes in (Cd, Pb, Zn)S quantum dots in the Langmuir-Blodgett matrix
A. G. Milekhin
L. L. Sveshnikova
S. M. Repinskii
A. K. Gutakovskii
M. Friedrich
D. R. T. Zahn
Physics of the Solid State, 2002, 44 : 1976 - 1980
[49] LANGMUIR-BLODGETT FILMS
AGARWAL, VK
PHYSICS TODAY, 1988, 41 (06) : 40 - 46
[50] LANGMUIR-BLODGETT FILMS
BARRAUD, A
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1985, 40 (227): : 359 - 365

← 1 2 3 4 5 →