CdZnS quantum dots formed by the Langmuir-Blodgett technique

被引:12
|
作者
Milekhin, Alexander G. [1 ]
Yeryukov, Nikolay A. [2 ]
Sveshnikova, Larisa L. [2 ]
Duda, Tatyana A. [2 ]
Protasov, Dmitry Yu [2 ]
Gutakovskii, Anton K. [2 ]
Batsanov, Stepan A. [2 ]
Surovtsev, Nikolay V. [3 ]
Adichtchev, Sergey V. [3 ]
Himcinschi, Cameliu [4 ]
Dzhagan, Volodymir [5 ]
Haidu, Francisc [6 ]
Zahn, Dietrich R. T. [6 ]
机构
[1] Novosibirsk State Univ, AV Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
[2] AV Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
[3] Russian Acad Sci, Inst Automat & Electrometry, Novosibirsk 630090, Russia
[4] Tech Univ Bergakad Freiberg, Inst Theoret Phys, D-09596 Freiberg, Germany
[5] V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
[6] Tech Univ Chemnitz, D-09107 Chemnitz, Germany
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 04期
关键词
RAMAN-SCATTERING; CDS1-XSEX NANOCRYSTALS; CD1-XZNXS NANOCRYSTALS; BOROSILICATE GLASS; SIZE-QUANTIZATION; SOLID-SOLUTIONS; OXIDE GLASS; THIN-FILMS; LB FILMS; CDS;
D O I
10.1116/1.4810782
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
CdZnS quantum dots (QDs) with systematically varied Zn content (from 0 to 100%) are formed in an organic matrix using the Langmuir-Blodgett technique. Annealing of the QD structures leads to a removal of the organic matrix and an increase in the Zn content for free-standing CdZnS QDs. After annealing, the size of QDs as determined from UV-vis absorption experiments is in good agreement with electron microscopy measurements. Analysis of UV-vis absorption and Raman scattering data demonstrates strong changes in the content of the CdZnS QDs upon annealing. A model of the process of QD formation is developed using the precipitation model and is found to adequately describe the experimental results. (C) 2013 American Vacuum Society.
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页数:7
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