CdZnS quantum dots formed by the Langmuir-Blodgett technique

被引：12

作者：

Milekhin, Alexander G. ^{[1
]}

Yeryukov, Nikolay A. ^{[2
]}

Sveshnikova, Larisa L. ^{[2
]}

Duda, Tatyana A. ^{[2
]}

Protasov, Dmitry Yu ^{[2
]}

Gutakovskii, Anton K. ^{[2
]}

Batsanov, Stepan A. ^{[2
]}

Surovtsev, Nikolay V. ^{[3
]}

Adichtchev, Sergey V. ^{[3
]}

Himcinschi, Cameliu ^{[4
]}

Dzhagan, Volodymir ^{[5
]}

Haidu, Francisc ^{[6
]}

Zahn, Dietrich R. T. ^{[6
]}

机构：

[1] Novosibirsk State Univ, AV Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[2] AV Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia

[3] Russian Acad Sci, Inst Automat & Electrometry, Novosibirsk 630090, Russia

[4] Tech Univ Bergakad Freiberg, Inst Theoret Phys, D-09596 Freiberg, Germany

[5] V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine

[6] Tech Univ Chemnitz, D-09107 Chemnitz, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 04期

关键词：

RAMAN-SCATTERING; CDS1-XSEX NANOCRYSTALS; CD1-XZNXS NANOCRYSTALS; BOROSILICATE GLASS; SIZE-QUANTIZATION; SOLID-SOLUTIONS; OXIDE GLASS; THIN-FILMS; LB FILMS; CDS;

D O I：

10.1116/1.4810782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CdZnS quantum dots (QDs) with systematically varied Zn content (from 0 to 100%) are formed in an organic matrix using the Langmuir-Blodgett technique. Annealing of the QD structures leads to a removal of the organic matrix and an increase in the Zn content for free-standing CdZnS QDs. After annealing, the size of QDs as determined from UV-vis absorption experiments is in good agreement with electron microscopy measurements. Analysis of UV-vis absorption and Raman scattering data demonstrates strong changes in the content of the CdZnS QDs upon annealing. A model of the process of QD formation is developed using the precipitation model and is found to adequately describe the experimental results. (C) 2013 American Vacuum Society.

引用

页数：7

共 50 条

[1] Vibrational spectra of quantum dots formed by Langmuir-Blodgett technique
Milekhin, A.
Sveshnikova, L.
Duda, T.
Surovtsev, N.
Adichtchev, S.
Ding, L.
Zahn, D. R. T.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (04): : C5E22 - C5E24
[2] Langmuir and Langmuir-Blodgett films of quantum dots
Xu, Jianmin
Ji, Xiaojun
Gattas-Asfura, Kerim M.
Wang, Chengshan
Leblanc, Roger M.
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2006, 284 : 35 - 42
[3] Langmuir and Langmuir-Blodgett films of quantum dots
Leblanc, Roger M.
Gattas-Asfura, Kerim M.
Ji, Xiaojun
Xu, Jianmin
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2007, 233
[4] Photoluminescence of the PbS quantum dots fabricated by the Langmuir-Blodgett technique
Gulyaev, D. V.
Sveshnikova, L. L.
Bacanov, S. A.
Gutakovskii, A. K.
Zhuravlev, K. S.
33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 864
[5] Resonance effects in Raman scattering of quantum dots formed by the Langmuir-Blodgett method
Milekhin, A. G.
Sveshnikova, L. L.
Duda, T. A.
Surovtsev, N. V.
Adichtchev, S. V.
Azhniuk, Yu M.
Himcinschi, C.
Kehr, M.
Zahn, D. R. T.
QUANTUM DOTS 2010, 2010, 245
[6] Quantum size effect of lead iodide nanoparticles formed by a Langmuir-Blodgett technique
Yamaki, T
Asai, K
Ishigure, K
Ema, K
Yaguchi, H
MOLECULAR CRYSTALS AND LIQUID CRYSTALS SCIENCE AND TECHNOLOGY SECTION A-MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1999, 337 : 225 - 228
[7] Preferential growth of Au on CdSe quantum dots using Langmuir-Blodgett technique
Das, Subhasis
Satpati, Biswarup
Chauhan, Himani
Deka, Sasanka
Gopinath, Chinnakonda S.
Bala, Tanushree
RSC ADVANCES, 2014, 4 (110) : 64535 - 64541
[8] Optical Phonons in Nanoclusters Formed by the Langmuir-Blodgett Technique
Milekhin, A.
Sveshnikova, L.
Duda, T.
Surovtsev, N.
Adichtchev, S.
Zahn, D. R. T.
CHINESE JOURNAL OF PHYSICS, 2011, 49 (01) : 63 - 70
[9] Photoluminescence kinetics in CdS nanoclusters formed by the Langmuir-Blodgett technique
Zarubanov, A. A.
Zhuravlev, K. S.
SEMICONDUCTORS, 2015, 49 (03) : 380 - 386
[10] Photoluminescence kinetics in CdS nanoclusters formed by the Langmuir-Blodgett technique
A. A. Zarubanov
K. S. Zhuravlev
Semiconductors, 2015, 49 : 380 - 386

← 1 2 3 4 5 →