The microstructure of low dose implanted GaN using Cr, Er, Eu and Yb ions

被引：5
作者：
Gloux, F [1 ]
Ruterana, P [1 ]
机构：
[1] ENSICAEN, CNRS, SIFCOM, UMR 6176, F-14050 Caen, France
来源：
OPTICAL MATERIALS | 2006年 / 28卷 / 6-7期
关键词：
D O I：
10.1016/j.optmat.2005.09.019
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low dose rare earth implanted GaN is characterized by high resolution transmission electron microscopy: Cr, Er, Yb and Eu implantation in the range 10(13)-10(14) at./cm(2) is investigated. The typical defect structure consists of a damaged layer containing a high density of stacking faults. Various sizes of I-1 stacking faults were observed and the occurrence of large I-1 faults (up to 200 nm) is correlated with a high threading dislocations density in some of the GaN layers. (c) 2005 Elsevier B.V. All rights reserved.
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页码：763 / 766
页数：4
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