Thermally induced degradation of condensation-grown (100)Ge0.75Si0.25/SiO2 interfaces revealed by electron spin resonance

被引：2
作者：
Kepa, J. [1 ]
Stesmans, A. [1 ]
Afanas'ev, V. V. [1 ]
机构：
[1] Univ Louvain, Dept Phys, Semicond Phys Lab, B-3001 Louvain, Belgium
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 12期
关键词：
(111)SI/SIO2 INTERFACE; HIGH-GE; OXIDATION; SILICON; DEFECT; SI; TEMPERATURE; PERFORMANCE; FABRICATION; GERMANIUM;
D O I：
10.1063/1.4795309
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The thermal stability under isochronal annealing of the GeSi/SiO2 interfaces in the condensation grown silicon-germanium-on-insulator (100)Si/SiO2/Ge0.75S0.25/SiO2 structure has been assessed by electron spin resonance in terms of occurring interface defects. As to annealing in vacuum, this reveals thermal post-growth interface degradation, from similar to 440 degrees C onward, on atomic scale as substantial generation of Ge dangling bond (GePb1) interface defects, previously identified as detrimental electron traps. A similar behavior is observed for annealing in H-2 (similar to 1 atm), except that the interface degradation evolves more gradually. The data bear out that the temperature of technological H-2 passivation treatments should not exceed similar to 440 degrees C. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795309]
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页数：5
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