Image sensor pixel with on-chip high extinction ratio polarizer based on 65-nm standard CMOS technology

被引：53

作者：

Sasagawa, Kiyotaka ^{[1
,2
]}

Shishido, Sanshiro ^{[1
]}

Ando, Keisuke ^{[1
]}

Matsuoka, Hitoshi ^{[1
]}

Noda, Toshihiko ^{[1
,2
]}

Tokuda, Takashi ^{[1
,2
]}

Kakiuchi, Kiyomi ^{[1
]}

Ohta, Jun ^{[1
,2
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Ikoma, Nara 6300192, Japan

[2] JST CREST, Kawaguchi, Saitama 3310012, Japan

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 09期

基金：

日本科学技术振兴机构;

关键词：

OPTICAL COHERENCE TOMOGRAPHY; NEAR-FIELDS; ARRAY; BAND; HETERODYNE;

D O I：

10.1364/OE.21.011132

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, we demonstrate a polarization sensitive pixel for a complementary metal-oxide-semiconductor (CMOS) image sensor based on 65-nm standard CMOS technology. Using such a deep-submicron CMOS technology, it is possible to design fine metal patterns smaller than the wavelengths of visible light by using a metal wire layer. We designed and fabricated a metal wire grid polarizer on a 20 x 20 mu m(2) pixel for image sensor. An extinction ratio of 19.7 dB was observed at a wavelength 750 nm. (C) 2013 Optical Society of America

引用

页码：11132 / 11140

页数：9