RF Characterization of Gigahertz Flexible Silicon Thin-Film Transistor on Plastic Substrates Under Bending Conditions

被引：38

作者：

Qin, Guoxuan ^{[1
]}

Seo, Jung-Hun ^{[2
]}

Zhang, Yang ^{[1
]}

Zhou, Han ^{[2
]}

Zhou, Weidong ^{[3
]}

Wang, Yuxin ^{[4
]}

Ma, Jianguo ^{[1
]}

Ma, Zhenqiang ^{[2
]}

机构：

[1] Tianjin Univ, Sch Elect Informat Engn, Tianjin 300072, Peoples R China

[2] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

[3] Univ Texas Arlington, Dept Elect Engn, NanoFAB Ctr, Arlington, TX 76019 USA

[4] Masterwork Machinery Co Ltd, Tianjin 300400, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Bending strain; flexible electronics; modeling; silicon nanomembrane (SiNM); thin-film transistor (TFT); NANOMEMBRANES; MOSFETS;

D O I：

10.1109/LED.2012.2231853

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents fabrication of a flexible 1.5-mu m-channel-length silicon thin-film transistor (TFT) on a plastic substrate with a cutoff frequency f(T) of similar to 3.7 GHz and a maximum oscillation frequency f(max) of similar to 12 GHz. Radiofrequency (RF) characterization is conducted for the flexible TFT under uniaxial mechanical bending conditions, indicating slight but notable monotonic performance enhancement with larger bending strains. Equivalent circuit model and theoretical analysis are employed to understand the underlying mechanism. Flexible gigahertz TFTs are shown to be naturally suitable for high-performance RF/microwave applications under mechanical bending (deformation) environment. This letter provides insight on designing and employing flexible gigahertz active devices.

引用

页码：262 / 264

页数：3

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