Growth and Characterization of α-, β-, and ε-Ga2O3 Epitaxial Layers on Sapphire

被引：24
|
作者：
Yao, Y. [1 ]
Lyle, L. A. M. [1 ]
Rokholt, J. A. [1 ]
Okur, S. [2 ]
Tompa, G. S. [2 ]
Salagaj, T. [2 ]
Sbrockey, N. [2 ]
Davis, R. F. [1 ]
Porter, L. M. [1 ]
机构：
[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
[2] Struct Mat Ind Inc, Piscataway, NJ 08854 USA
来源：
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7 | 2017年 / 80卷 / 07期
基金：
美国国家科学基金会;
关键词：
BETA-GA2O3; SINGLE-CRYSTALS; MOLECULAR-BEAM EPITAXY; FILMS; HETEROEPITAXY;
D O I：
10.1149/08007.0191ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This study reports on the growth and characterization of three different phases - alpha, beta, and epsilon - of Ga2O3 epitaxial layers grown on (001) sapphire substrates at 650 degrees C. The stable beta-phase was observed for films grown using metalorganic chemical vapor deposition with trimethygallium and oxygen as source gases. In contrast, the alpha- and/or epsilon-phase(s) were observed for films grown by halide vapor phase epitaxy with gallium chloride and oxygen as source gases. Orientation relationships from x-ray diffraction measurements are reported, along with transmission electron microscopy images of the interfacial microstructure and optical transmittance measurements of the different phases.
引用
收藏
页码：191 / 196
页数：6
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