Multiple switching phenomena of AlGaAs/InGaAs/GaAs heterostructure transistors

被引：0
作者：
Cheng, CC
Tsai, JH
Liu, WC
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 3A期
关键词：
negative-differential-resistance (NDR); switching; avalanche multiplication; barrier lowering effects; quantum well (QW); regenerative-loop feedback; confinement effect;
D O I：
10.1143/JJAP.36.980
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An interesting multiple negative-differential-resistance (NDR) phenomenon is observed in AlGaAs/InGaAs/GaAs heterostructure bipolar transistors with abrupt or graded AlGaAs confinement lavers under the inverted operation mode. The switching behaviors are mainly due to avalanche multiplication and a two-stage barrier lowering effect. The switching properties of the first S-shaped NDR observed in the device with the abrupt confinement layer are better than those observed in the device with the graded confinement layer, due to the former device's superior confinement effect on holes and electrons. The control voltage efficiency of the second S-shaped NDR is nearly equal in the studied devices because the InGaAs quantum well dominates the properties of this NDR.
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页码：980 / 983
页数：4
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