Strain-induced D band observed in carbon nanotubes

被引：28
作者：
Chang, Chia-Chi [1 ]
Chen, Chun-Chung [2 ]
Hung, Wei-Hsuan [4 ]
Hsu, I-Kai [3 ]
Pimenta, Marcos A. [5 ]
Cronin, Stephen B. [1 ,2 ]
机构：
[1] Univ So Calif, Dept Phys, Los Angeles, CA 90089 USA
[2] Univ So Calif, Dept Elect Engn, Los Angeles, CA 90089 USA
[3] Univ So Calif, Dept Mat Sci, Los Angeles, CA 90089 USA
[4] Feng Chia Univ, Dept Mat Sci & Engn, Taichung, Taiwan
[5] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
来源：
NANO RESEARCH | 2012年 / 5卷 / 12期
关键词：
SWCNTs; Raman; D band; defects; strain; sp(2) bond; GRAPHENE RAMAN-SPECTROSCOPY; UNIAXIAL STRAIN; STRENGTH; MANIPULATION; DEFECTS; TIP;
D O I：
10.1007/s12274-012-0269-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report the emergence of the D band Raman mode in single-walled carbon nanotubes under large axial strain. The D to G mode Raman intensity ratio (I (D)/I (G)) is observed to increase with strain quadratically by more than a factor of 100-fold. Up to 5% strain, all changes in the Raman spectra are reversible. The emergence of the D band, instead, arises from the reversible and elastic symmetry-lowering of the sp(2) bonds structure. Beyond 5%, we observe irreversible changes in the Raman spectra due to slippage of the nanotube from the underlying substrate, however, the D band intensity resumes its original pre-strain intensity, indicating that no permanent defects are formed.
引用
收藏
页码：854 / 862
页数：9
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