Reactive-ion etching of Sn-doped Ge2Sb2Te5 in CHF3/O2 plasma for non-volatile phase-change memory device

被引：14

作者：

Xu, Cheng ^{[1
,2
]}

Liu, Bo ^{[1
]}

Song, Zhitang ^{[1
]}

Feng, Songlin ^{[1
]}

Chen, Bomy ^{[3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

[3] Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 21期

关键词：

Sn-doped germanium antimony telluride; reactive-ion etching; selectivity; phase change material; scanning electron microscopy; trifluoromethane; oxygen; CHF3/O2;

D O I：

10.1016/j.tsf.2008.05.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The reactive-ion etching of Sn-doped Ge2Sb2Te5 (GST) films with different Sn concentration in CHF3/O-2 plasma was studied. By changing the gas mixture ratio and radio-frequency (RF) power under constant chamber pressure, the relatively smooth surface morphologies of etched Sn-doped GST were obtained. The characteristics of etch rate as functions of gas mixture, chamber pressure, and RF power were also investigated. Besides that, the etching selectivity of Sn-doped GST to SiO2 and photoresist was measured. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：7871 / 7874

页数：4

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