GaN Islands Density Growth Kinetics on (0001) AlN Surface by Ammonia Molecular-beam Epitaxy

被引：0

作者：

Nikitin, Andrey N. ^{[1
]}

Mansurov, Vladimir G. ^{[1
]}

Galitsyn, Yuriy G. ^{[1
]}

Zhuravlev, Konstantin S. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

EDM 2008: INTERNATIONAL WORKSHOP AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, PROCEEDINGS | 2008年

关键词：

MBE; kinetics; heterogeneous nucleation;

D O I：

10.1109/SIBEDM.2008.4585843

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

At the present work 3D nucleation kinetics of GaN on (0001)AlN was experimentally studied. The initial stages of the GaN growth on the flat AlN surface were monitored by a real-time reflection high-energy electron diffraction (RHEED) technique. Exponential 3D-nucleation kinetics of GaN was experimentally revealed. Experimental results are discussed in the frame of scaling equation for the islands density.

引用

页码：48 / 48

页数：1