Sub-10-Nanometer-Scale Laser Ablation on Hard Materials From Dielectric Near-Field Nanophotonics

被引：0

作者：

Kwon, Yong Ho ^{[1
]}

Liu, Hewei ^{[1
]}

Yi, Soongyu ^{[1
]}

Bian, Hao ^{[1
,2
]}

Chen, Feng ^{[2
]}

Yu, Zongfu ^{[1
]}

Jiang, Hongrui ^{[1
]}

机构：

[1] Univ Wisconsin Madison, Madison, WI 53706 USA

[2] Xi An Jiao Tong Univ, Xian, Shaanxi, Peoples R China

来源：

2017 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN) | 2017年

关键词：

Nanofabrication; Laser ablation; Nanophotonics; Dielectric materials;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper demonstrates sub-10-nanometer (nm) laser ablation on hard materials. An 800-nm-wavelength femtosecond laser is focused down to sub-diffraction-limited scale by a silicon nanophotonic structure fabricated on a silicon-on-isolator (SOI) substrate, which is utilized to enable the ablation on the silicon dioxide (SiO2) layer of the SOI. Atomic force microscopy (AFM) results show a minimum ablation linewidth of about 8 nm with a depth-to-width ratio close to 1.

引用

页码：99 / 100

页数：2

共 4 条

[1] Femtosecond laser aperturless near-field nanomachining of metals assisted by scanning probe microscopy [J].