A 1.9 GHz single-chip RF front-end GaAs MMIC with low-distortion cascode FET mixer

被引：0

作者：

Nakayama, M ^{[1
]}

Horiguchi, K

Yamamoto, K

Yoshii, Y

Sugiyama, S

Suematsu, N

Takagi, T

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, Kamakura, Kanagawa 2478501, Japan

[2] Mitsubishi Electr Corp, High Frequency & Opt Semicond Div, Itami, Hyogo 6648641, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 1999年 / E82C卷 / 05期

关键词：

GaAs MMIC; single-chip front-end; mixer; cascode FET; low distortion;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated the single-chip RF front-end GaAs MMIC for the Japanese Personal Handy-phone System. It has a high efficiency HPA, a T/R switch, a LNA and a low-distortion down converter mixer. The IC employs a negative voltage generator for use of single voltage DC power supply The HPA provides an output power of 21.5 dBm, with an ACPR of -55 dBc and an efficiency of 35%. The LNA has a noise figure of 1.6 dB and a gain of 14 dB with current of 2.3 mA. The newly developed active cascode FET mixer has a high IIP3 of -1 dBm with a high conversion gain of 10 dB and low consumption current of 2.3 mA. The IC is characterized by high performance for RF front-end of PHS handheld terminals. The IC is available in a 7.0 mm x 6.4 mm x 1.1 mm plastic package.

引用

页码：717 / 724

页数：8

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