ALD ZrO2 processes for BEoL device applications

被引：0

作者：

Weinreich, Wenke ^{[1
]}

Seidel, Konrad ^{[1
]}

Polakowski, Patrick ^{[1
]}

Riedel, Stefan ^{[1
]}

Wilde, Lutz ^{[1
]}

Triyoso, Dina H. ^{[2
]}

Nolan, Mark G. ^{[3
]}

机构：

[1] Fraunhofer Inst Photon Microsyst, Fraunhofer Ctr Nanoelect Technol, Dresden, Germany

[2] GLOBALFOUNDRIES, Malta, NY USA

[3] GLOBALFOUNDRIES, Dresden, Germany

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN & TECHNOLOGY (ICICDT) | 2014年

关键词：

MIM capacitors; atomic layer deposition; BEoL application;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper three different ZrO2 ALD processes are studied as high-k dielectric in BEoL device applications. One metal organic precursor is compared to a halide precursor used with two different oxidizing agents. The structure, composition and morphology of the films are analyzed on bare Si wafers and the electrical properties such as capacitance, leakage and reliability are investigated on fully integrated BEoL decoupling capacitors. One of the halide ALD processes is identified as the most promising candidate for BEoL capacitor applications.

引用

页数：4

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