Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n+/p Diode Achieved by Implantation and Excimer Laser Annealing

被引：14

作者：

Wang, Chen ^{[1
]}

Li, Cheng ^{[1
]}

Huang, Shihao ^{[1
]}

Lu, Weifang ^{[1
]}

Yan, Guangming ^{[1
]}

Lin, Guangyang ^{[1
]}

Wei, Jiangbin ^{[1
]}

Huang, Wei ^{[1
]}

Lai, Hongkai ^{[1
]}

Chen, Songyan ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 10期

基金：

中国国家自然科学基金;

关键词：

GERMANIUM; ACTIVATION; JUNCTIONS; AMORPHIZATION; TAN;

D O I：

10.7567/APEX.6.106501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Excimer laser annealing of phosphorus-implanted p-type germanium substrate with various laser energy densities for n(+)/p junction were investigated. The effects of laser energy density on the redistribution of dopant, surface morphology, and recrystallization of the amorphous Ge induced by ion implantation were characterized. A low specific contact resistivity of 1.61 x 10(-6) Omega.cm(2) was achieved from Al/n-Ge ohmic contact, in which phosphorus-implanted Ge was annealed at a laser energy density of 250 mJ/cm(2), tailoring a small phosphorus diffusion length, high activation level, and low dopant loss. A well-behaved Ge n(+)/p diode with a rectification ratio up to 1.99 x 10(5) was demonstrated. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 23 条

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Li, Zhiqiang
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IEEE ELECTRON DEVICE LETTERS, 2013, 34 (09) : 1097 - 1099
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VACUUM, 2020, 180 (180)
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IEEE ELECTRON DEVICE LETTERS, 2018, 39 (01) : 91 - 94
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Wang Chen
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ACTA PHYSICA SINICA, 2019, 68 (17)
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Wang, Chen
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IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (14) : 1485 - 1488
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CHINESE PHYSICS B, 2018, 27 (01)
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Journal of Materials Science: Materials in Electronics, 2025, 36 (13)
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IEEE ELECTRON DEVICE LETTERS, 2012, 33 (11) : 1541 - 1543
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许怡红
李成
林海军
Chinese Physics B, 2018, (01) : 602 - 605

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