Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors: Free-space light detection from the visible to short-wave infrared

被引：0

作者：

Unsuree, N. ^{[1
]}

Mustafa, T. ^{[1
]}

Selvi, H. ^{[1
]}

Parkinson, P. ^{[2
,3
]}

Echtermeyer, T. J. ^{[1
,2
,4
]}

机构：

[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Photon Sci Inst, Manchester M13 9PL, Lancs, England

[3] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[4] Univ Manchester, Natl Graphene Inst, Manchester M13 9PL, Lancs, England

来源：

2018 20TH INTERNATIONAL CONFERENCE ON ELECTRONIC MATERIALS AND PACKAGING (EMAP) | 2018年

关键词：

PHOTORESPONSE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detection of light in the near- and short-wave infrared spectral region is of great interest for applications ranging from imaging to sensing. However, silicon commonly employed for photodetectors is limited in its spectral range to wavelengths of 400...1100nm due to its band gap of similar to 1.1eV, Materials for light detection in the wavelength range >1100nm are typically III-V-based semiconductors such as e.g. InGaAs which are difficult to integrate with CMOS technology, hindering use in main-stream applications due to technical issues and associated high cost. Here, we present graphene-silicon hybrid structure photodetectors which demonstrate an extended spectral detection range from similar to 400...1700nm.

引用

页数：2