Electrodeposition and Properties of CuInS2 Thin Films

被引：2
|
作者：
Zhou Haifang [1 ]
Chen Xiaohu [2 ]
机构：
[1] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
[2] Coll Fujian Hlth, Fuzhou 350101, Peoples R China
来源：
MATERIAL DESIGN, PROCESSING AND APPLICATIONS, PARTS 1-4 | 2013年 / 690-693卷
基金：
中国国家自然科学基金;
关键词：
Electrodeposition; Thin films; Optical properties;
D O I：
10.4028/www.scientific.net/AMR.690-693.1659
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550 degrees C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20x10(17) cm(-3), respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 inA/cm(2) under 255 lx illumination, the sample shows the photo-enhancement effect.
引用
收藏
页码：1659 / +
页数：2
相关论文
共 50 条
  • [41] Electrochemical interface modification of CuInS2 thin films
    Aggour, M
    Störkel, U
    Murrell, C
    Campbell, SA
    Jungblut, H
    Hoffmann, P
    Mikalo, R
    Schmeisser, D
    Lewerenz, HJ
    THIN SOLID FILMS, 2002, 403 : 57 - 61
  • [42] Influence of KCN treatment on CuInS2 thin films
    Ogawa, Y
    JagerWaldau, A
    Hua, TH
    Hashimoto, Y
    Ito, K
    APPLIED SURFACE SCIENCE, 1996, 92 : 232 - 236
  • [43] EFFECT OF ANTIMONY INCORPORATION IN CuInS2 THIN FILMS
    Ben Rabeh, M.
    Chaglabou, N.
    Kanzari, M.
    CHALCOGENIDE LETTERS, 2009, 6 (04): : 155 - 161
  • [44] Properties of CuInS2 thin films for solar cells prepared by spray pyrolysis
    OrtegaLopez, M
    MoralesAcevedo, A
    CONFERENCE RECORD OF THE TWENTY FIFTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1996, 1996, : 1009 - 1012
  • [45] STRUCTURAL AND OPTICAL-PROPERTIES OF SPRAYED CUINS2 THIN-FILMS
    BIHRI, H
    MESSAOUDI, C
    SAYAH, D
    ABDLEFDIL, M
    CADENE, M
    MATERIALS CHEMISTRY AND PHYSICS, 1993, 34 (01) : 24 - 27
  • [46] Preparation of CuInS2 thin films by paste coating
    Xu, Jingang
    Wang, Yanlai
    MATERIALS LETTERS, 2013, 99 : 90 - 93
  • [47] Heterogeneous reaction route to CuInS2 thin films
    Lin, M
    Loh, KP
    Deivaraj, TC
    Vittal, JJ
    CHEMICAL COMMUNICATIONS, 2002, (13) : 1400 - 1401
  • [48] Drift velocity measurements in CuInS2 thin films
    Reddy, KV
    Kumar, AP
    SEMICONDUCTOR DEVICES, 1996, 2733 : 403 - 405
  • [49] GROWTH AND PROPERTIES OF SPUTTER-DEPOSITED CUINS2 THIN-FILMS
    HWANG, HL
    CHENG, CL
    LIU, LM
    LIU, YC
    SUN, CY
    THIN SOLID FILMS, 1980, 67 (01) : 83 - 93
  • [50] Influence of Ce doping on structural and photoelectric properties of CuInS2 thin films
    Zhu, Jun
    Xiao, Lingling
    Ding, Tiezhu
    Wang, Yanlai
    Fan, Yue
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (11)
12345