Electrodeposition and Properties of CuInS2 Thin Films

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550 degrees C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20x10(17) cm(-3), respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 inA/cm(2) under 255 lx illumination, the sample shows the photo-enhancement effect.