Effect of chemisorption of donor and acceptor gases on the semiconductor-metal phase transition in vanadium dioxide films

被引：6
|
作者：
Tutov, E. A. [1 ]
Zlomanov, V. P. [2 ]
机构：
[1] Voronezh State Univ, Voronezh 394006, Russia
[2] Moscow MV Lomonosov State Univ, Moscow 119991, Russia
来源：
PHYSICS OF THE SOLID STATE | 2013年 / 55卷 / 11期
关键词：
THIN-FILMS; INSULATOR-TRANSITION; MOTT TRANSITION; HYDROGENATION;
D O I：
10.1134/S1063783413110280
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Heterophase textured films of vanadium dioxide on single-crystal silicon substrates have been synthesized by the sol-gel method from solutions of triethoxyvanadyl VO(OEt)(3) in methyl cellosolve CH3OCH2CH2OH. The effect of ozone and ethanol vapor chemisorption on the parameters of the semiconductor-metal phase transition in vanadium dioxide VO2(B) has been studied. It has been found that the transition temperature increases in a reducing atmosphere and decreases in an oxidizing atmosphere.
引用
收藏
页码：2351 / 2354
页数：4
相关论文
共 50 条
  • [31] EFFECT OF UNIAXIAL PRESSURE ON THE METAL-SEMICONDUCTOR PHASE TRANSITION IN VANADIUM DIOXIDE FILMS.
    Bilenko, D.I.
    Zharkova, E.A.
    Khasina, E.I.
    Borisov, S.P.
    Stal'makhov, A.V.
    Soviet Microelectronics (English Translation of Mikroelektronika), 1979, 8 (01): : 54 - 56
  • [32] Effect of synthesis conditions on the metal-semiconductor phase transition in vanadium dioxide thin films
    Aliev, RA
    Klimov, VA
    PHYSICS OF THE SOLID STATE, 2004, 46 (03) : 532 - 536
  • [33] Effect of synthesis conditions on the metal-semiconductor phase transition in vanadium dioxide thin films
    R. A. Aliev
    V. A. Klimov
    Physics of the Solid State, 2004, 46 : 532 - 536
  • [34] Microwave Power Limiting Devices Based on the Semiconductor-Metal Transition in Vanadium-Dioxide Thin Films
    Givernaud, Julien
    Crunteanu, Aurelian
    Orlianges, Jean-Cristophe
    Pothier, Arnaud
    Champeaux, Corinne
    Catherinot, Alain
    Blondy, Pierre
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2010, 58 (09) : 2352 - 2361
  • [35] Semiconductor-metal phase transition properties and growth texture of vanadium dioxide films on Si3N4 layer
    Wei, Xiongbang
    Yang, Xiaohui
    Wu, Tao
    Li, Shibin
    Wu, Shuanghong
    Wu, Zhiming
    Wang, Tao
    Jiang, Yadong
    Chen, Zhi
    INTEGRATED FERROELECTRICS, 2016, 171 (01) : 208 - 214
  • [36] Current oscillations as a manifestation of spatio-temporal inhomogeneity of temperature distribution in vanadium dioxide films at semiconductor-metal phase transition
    Aliev, V. Sh.
    Bortnikov, S. G.
    Mzhelskiy, I. V.
    Badmaeva, I. A.
    APPLIED PHYSICS LETTERS, 2014, 105 (14)
  • [37] Semiconductor-Metal Phase Transition and "Tristable" Electrical Switching in Nanocrystalline Vanadium Oxide Films on Silicon
    Tutov, E. A.
    Goloshchapov, D. L.
    Zlomanov, V. P.
    TECHNICAL PHYSICS LETTERS, 2019, 45 (06) : 584 - 587
  • [38] Effect of Mo-W Co-doping on semiconductor-metal phase transition temperature of vanadium dioxide film
    Yan Jiazhen
    Zhang Yue
    Huang Wanxia
    Tu Mingjin
    THIN SOLID FILMS, 2008, 516 (23) : 8554 - 8558
  • [39] INFLUENCE OF DEVIATIONS FROM THE CRYSTAL LATTICE PERIODICITY ON THE SEMICONDUCTOR-METAL PHASE TRANSITION IN VANADIUM DIOXIDE.
    Begishev, A.R.
    Galiev, G.B.
    Ignat'ev, A.S.
    Mokerov, V.G.
    Poshin, V.G.
    1978, 20 (06): : 951 - 955
  • [40] PHOTOEMISSION-STUDY OF HYDROGEN ADSORPTION ON VANADIUM DIOXIDE NEAR THE SEMICONDUCTOR-METAL PHASE-TRANSITION
    BERMUDEZ, VM
    WILLIAMS, RT
    LONG, JP
    REED, RK
    KLEIN, PH
    PHYSICAL REVIEW B, 1992, 45 (16): : 9266 - 9271
12345