Effect of chemisorption of donor and acceptor gases on the semiconductor-metal phase transition in vanadium dioxide films

被引：6
|
作者：
Tutov, E. A. [1 ]
Zlomanov, V. P. [2 ]
机构：
[1] Voronezh State Univ, Voronezh 394006, Russia
[2] Moscow MV Lomonosov State Univ, Moscow 119991, Russia
来源：
PHYSICS OF THE SOLID STATE | 2013年 / 55卷 / 11期
关键词：
THIN-FILMS; INSULATOR-TRANSITION; MOTT TRANSITION; HYDROGENATION;
D O I：
10.1134/S1063783413110280
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Heterophase textured films of vanadium dioxide on single-crystal silicon substrates have been synthesized by the sol-gel method from solutions of triethoxyvanadyl VO(OEt)(3) in methyl cellosolve CH3OCH2CH2OH. The effect of ozone and ethanol vapor chemisorption on the parameters of the semiconductor-metal phase transition in vanadium dioxide VO2(B) has been studied. It has been found that the transition temperature increases in a reducing atmosphere and decreases in an oxidizing atmosphere.
引用
收藏
页码：2351 / 2354
页数：4
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