A hot hole-programmed and low-temperature-formed SONOS flash memory

被引：8
作者：
Chang, Yuan-Ming [1 ,2 ]
Yang, Wen-Luh [1 ]
Liu, Sheng-Hsien [1 ,2 ]
Hsiao, Yu-Ping [1 ,2 ]
Wu, Jia-Yo [3 ,4 ]
Wu, Chi-Chang [5 ]
机构：
[1] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan
[2] Feng Chia Univ, PhD Program Elect & Commun Engn, Taichung 407, Taiwan
[3] Taipei Med Univ Hosp, Dept Dent, Taipei 110, Taiwan
[4] Taipei Med Univ, Sch Dent, Coll Oral Med, Taipei 110, Taiwan
[5] Taipei Med Univ, Coll Oral Med, Grad Inst Biomed Mat & Tissue Engn, Taipei 110, Taiwan
来源：
NANOSCALE RESEARCH LETTERS | 2013年 / 8卷
关键词：
Sol-gel; Hole trapping; Flash memory; ELECTRICAL-PROPERTIES; LAYER; TRAP; GERMANIUM;
D O I：
10.1186/1556-276X-8-340
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this study, a high-performance Ti (x) Zr (y) Si (z) O flash memory is demonstrated using a sol-gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600A degrees C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 mu s with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 10(6) s with only 5% (at 85A degrees C) and 10% (at 125A degrees C) charge loss. The barrier height of the Ti (x) Zr (y) Si (z) O film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-kappa sol-gel film.
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页数：7
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