Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

被引：23
作者：
Pu, Nen-Wen [1 ]
Liu, Wei-Sheng [1 ]
Cheng, Huai-Ming [1 ]
Hu, Hung-Chun [1 ]
Hsieh, Wei-Ting [1 ]
Yu, Hau-Wei [1 ]
Liang, Shih-Chang [2 ]
机构：
[1] Yuan Ze Univ, Dept Photon Engn, Chungli 32003, Taiwan
[2] Chung Shan Inst Sci & Technol, Mat & Electopt Res Div, Lungtan 32599, Taiwan
来源：
MATERIALS | 2015年 / 8卷 / 09期
关键词：
oxide-related compound; indium tin oxide (ITO); magnetron sputtering; transparent conducting oxide (TCO); TRANSPARENT CONDUCTIVE FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; ITO FILMS; TRANSMITTANCE; FABRICATION; PANEL; GLASS;
D O I：
10.3390/ma8095316
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 degrees C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 x 10(-4) /cm), carrier concentration (4.1 x 10(21) cm(-3)), carrier mobility (10 cm(2)/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 degrees C. The superior carrier concentration of the Ti-doped ITO alloys (>10(21) cm(-3)) with a high figure of merit (81.1 x 10(-3) (-1)) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.
引用
收藏
页码：6471 / 6481
页数：11
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