Degradation of GaN high-electron mobility transistors in voltage step stress

被引：0

作者：

Wang, Xinhua ^{[1
]}

Pang, Lei ^{[1
]}

Wang, Jianhui ^{[1
]}

Yuan, Tingting ^{[1
]}

Luo, Weijun ^{[1
]}

Chen, Xiaojuan ^{[1
]}

Liu, Xinyu ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Microelect Device & Integrated Technol, Inst Microelect, Beijing, Peoples R China

来源：

2012 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT | 2012年

关键词：

ALGAN/GAN HEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Voltage step-stress tests on GaN-on-SiC HEMT showed that electric field is a driving factor for degradation. The position of localized damage is corresponding to the high electric field region. A degradation mode different from previous reports is observed, which led to an increase of drain current after stress in certain conditions. We attribute this to the collection of the positive mobile charge under the gate during the stress.

引用

页码：122 / 124

页数：3

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