In situ high-temperature characterization of AlN-based surface acoustic wave devices

被引：60

作者：

Aubert, Thierry ^{[1
]}

Bardong, Jochen ^{[2
]}

Legrani, Ouarda ^{[3
]}

Elmazria, Omar ^{[3
]}

Assouar, M. Badreddine ^{[3
,4
]}

Bruckner, Gudrun ^{[2
]}

Talbi, Abdelkrim ^{[5
]}

机构：

[1] Univ Savoie, Lab Symme, Annecy Le Vieux, France

[2] CTR, Villach, Austria

[3] Nancy Univ, CNRS, UMR 7198, IJL, Vandoeuvre Les Nancy, France

[4] Georgia Inst Technol, CNRS, UMI 2958, Int Joint Lab, Atlanta, GA 30332 USA

[5] IEMN, Lille, France

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 01期

关键词：

INTERDIGITAL TRANSDUCERS; SAW DEVICES; STABILITY; IRIDIUM;

D O I：

10.1063/1.4812565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on in situ electrical measurements of surface acoustic wave delay lines based on AlN/sapphire structure and iridium interdigital transducers between 20 degrees C and 1050 degrees C under vacuum conditions. The devices show a great potential for temperature sensing applications. Burnout is only observed after 60 h at 1050 degrees C and is mainly attributed to the agglomeration phenomena undergone by the Ir transducers. However, despite the vacuum conditions, a significant oxidation of the AlN film is observed, pointing out the limitation of the considered structure at least at such extreme temperatures. Original structures overcoming this limitation are then proposed and discussed. (C) 2013 AIP Publishing LLC.

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页数：6

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