Growth of Silicon Nanocrystallites in Amorphous Silicon Carbide Thin Films by Aluminum Induced Crystallization

被引：1

作者：

Kole, Arindam ^{[1
]}

Chaudhuri, Partha ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Energy Res Unit, Kolkata 700032, India

来源：

PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS & MATERIAL SCIENCE (RAM 2013) | 2013年 / 1536卷

关键词：

Silicon nanocrystallites in amorphous silicon carbide; PECVD; aluminum induced crystallization;

D O I：

10.1063/1.4810150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of silicon nanocrystallites within the amorphous silicon carbide (a-SiC:H) thin films has been studied during stepwise vacuum annealing of the films deposited on bare quartz and 100 nm aluminum coated quartz substrates by plasma enhanced chemical vapour deposition (PECVD) method. Comparison of the effect of aluminum on the crystallization process with the corresponding references films of a-SiC:H deposited on bare quartz by XRD and Raman scattering measurements shows that the aluminum induces the growth of silicon nanocrystallites at an enhanced rate.

引用

页码：161 / +

页数：2

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