Eco-friendly method of fabricating indium-tin-oxide thin films using pure aqueous sol-gel

被引：23
|
作者：
Misra, Mirnmoy [1 ]
Hwang, Deuk-Kyu [2 ]
Kim, Yoon Cheol [2 ]
Myoung, Jae-Min [2 ]
Lee, Tae Il [1 ]
机构：
[1] Gachon Univ, Dept BioNano Technol, Seong Nam 13120, Gyeonggi, South Korea
[2] Yonsei Univ, Dept Mat Sci & Engn, 50 Yonsei Ro, Seoul 03722, South Korea
来源：
CERAMICS INTERNATIONAL | 2018年 / 44卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
Indium tin oxide; Aqueous sol-gel; Sheet resistance; Transmittance; Annealing temperature; ELECTRICAL-PROPERTIES; ROOM-TEMPERATURE; TRANSPARENT; DEPOSITION; ROUTE;
D O I：
10.1016/j.ceramint.2017.11.041
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
An indium-tin-oxide (ITO) thin film with approximately 50 nm thickness was successfully synthesized on glass substrates by using a fully aqueous sol-gel process. The sol was prepared from indium nitrate hydrate and tin fluoride as a precursor. Thermogravimetric analysis confirmed that the sol converted into crystalline ITO at 286 degrees C. The optical band gap and transmittance of the thin film were observed to increase with annealing temperature and plasma treatment time. X-ray photoelectron spectroscopy and transmittance studies established that the number of oxygen vacancies in the thin film drastically increased with increasing temperature and plasma treatment. The annealing temperature and argon plasma treatment time appear to be key factors in reducing resistivity and increasing the transmittance of the thin film. A considerable decrease in the resistivity of the ITO thin film was observed after Ar plasma treatment. This eco-friendly sol-gel ITO thin film may find potential applications in n-type ohmic electrodes for ink-jet printable electronics.
引用
收藏
页码：2927 / 2933
页数：7
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